Products
Our product portfolio covers five series — sapphire, silicon carbide, monocrystalline silicon, fused quartz and alumina ceramics — with specifications representing stable batch-production levels. For non-standard requirements, sample slicing is available first and pricing is confirmed against measured data.
Sapphire wafers & substrates
High-purity sapphire crystals (>5N) grown by the Kyropoulos method, processed into C-plane (0001) wafers, 310 × 310 mm substrates and optical windows with an orientation tolerance of ±2°, double-side CMP polishing and surface roughness Ra ≤ 0.3 μm. Primary applications: LED substrates and optical windows.
- Ingots up to 12 in; wafers and sheets 2–6 in
- 310 × 310 mm square sheet within ±0.2 mm
- Transmission above 70 % at 355 nm and 1,064 nm
| Material | Single-crystal Al₂O₃, Kyropoulos |
|---|---|
| Purity | > 5N |
| Orientation | C-plane (0001), offcut ±2° |
| Diameter | 2 in / 4 in / 6 in |
| Square sheet | 310 × 310 mm ±0.2 mm |
| Thickness | 700 / 1,000 μm ±3 μm |
| Surface finish | Ra ≤ 0.3 μm, CMP both faces |
| Transmission | > 70 % @ 355 nm & 1,064 nm |
| TTV / bow | Per sample |
| Material | 4H-SiC, PVT grown |
|---|---|
| Diameter | 6 in / 8 in |
| Thickness | 350 / 500 μm |
| Grade | N-type · semi-insulating |
| Orientation | 4° off-axis (0001) toward [11-20] |
| Faces | Si-face polished, C-face ground or polished |
| Surface finish | Ra ≤ 0.3 μm |
| TTV / bow / warp | Per sample |
| Note | Values confirmed on trial slices before quoting |
SiC substrates
6-inch and 8-inch 4H-SiC substrates in conductive and semi-insulating grades. Conductive substrates suit power devices such as MOSFETs and Schottky diodes; semi-insulating substrates suit RF and HEMT devices. Available as ground or polished wafers; TTV, warp and other parameters are agreed with the customer and verified by measurement.
- N-type and semi-insulating grades
- Sliced on the same multi-wire line as sapphire
- Trial slices available before a volume order
Silicon wafers
6/8/12-inch monocrystalline silicon wafers with <100>/<111> orientation, available in prime and test grades with single- or double-side polishing. They meet device development, dummy wafer and process verification needs; small-quantity orders are also accepted.
- 6 in / 8 in / 12 in, <100> or <111>
- Single- or double-side polished
- Test grade for process trials at lower cost
| Material | Czochralski monocrystalline Si |
|---|---|
| Diameter | 6 in / 8 in / 12 in |
| Thickness | 200–1,000 μm |
| Orientation | <100> / <111> ±0.5° |
| Type / doping | P-type (B) · N-type (P) |
| Grade | Prime · test |
| Surface | Single- or double-side polished |
| Flatness / TTV | Per sample |
| Material | Fused silica, JGS1 / JGS2 / JGS3 |
|---|---|
| Dimension | Up to 310 × 310 mm |
| Thickness | 0.5–20 mm |
| Tolerance | ±0.05 mm |
| Surface finish | Ra ≤ 0.01 μm polished, or fine ground |
| Transmission | > 90 % over 250–2,000 nm (JGS1) |
| OH content | < 10 ppm (JGS1) · 100–200 ppm (JGS2) |
| Edge | Fine ground, chamfer optional |
Fused quartz
JGS1, JGS2 and JGS3 fused quartz plates, windows and discs with a dimensional tolerance of ±0.05 mm; JGS1 offers transmittance >90% in the deep-UV range. Suitable for optical inspection and precision instruments, with beveling, holes and steps available per drawing.
- JGS1, JGS2 and JGS3 in stock sizes
- ±0.05 mm on dimension, lapped flat
- Holes, steps and chamfers on request
Alumina ceramics
95% and 99% alumina substrates and wear parts, 0.25–10 mm thick, with flatness ≤0.02 mm and flexural strength ≥300 MPa, sliced and lapped to the required thickness per drawing. Widely used in electrical insulation and wear-resistant structural components.
- 95 % and 99 % purity grades
- 0.25 mm to 10 mm, flat within 0.02 mm
- Lapped or polished faces, edges as drawn
| Material | Al₂O₃ 95 % / 99 % |
|---|---|
| Dimension | Up to 200 × 200 mm |
| Thickness | 0.25–10 mm |
| Tolerance | ±0.02 mm |
| Flatness | ≤ 0.02 mm |
| Surface finish | Ra ≤ 0.4 μm lapped |
| Density | ≥ 3.8 g/cm³ |
| Flexural strength | ≥ 300 MPa |
Custom slicing
Beyond standard products, the company accepts custom slicing of GaAs, GaN, glass, piezoelectric ceramics and non-standard geometries. Customers simply provide drawings and target tolerances for evaluation; new materials can be validated by sample slicing before mass production.
- GaAs, GaN, glass, piezoceramics and non-standard shapes
- Drawing and target tolerance are enough for an assessment
- New materials validated by sample slicing first
| Materials | GaAs, GaN, glass, piezoceramics, others on request |
|---|---|
| Geometry | Rectangles, rounds, windows, non-standard shapes |
| Tolerance | Per drawing; we confirm what routine production holds |
| Validation | Sample slicing before mass production |
Five material families, one table
A condensed version of the tables above — useful when the question is which material, not which size.
| Material | Format | Thickness | Tolerance | Typical use |
|---|---|---|---|---|
| Sapphire | Wafers, 310 × 310 sheet | 700 / 1,000 μm | ±3 μm | LED substrates, covers |
| Silicon carbide | 6 in / 8 in wafers | 350 / 500 μm | Per sample | Power devices |
| Silicon | 6 / 8 / 12 in wafers | 200–1,000 μm | Per sample | Device development |
| Fused quartz | Slides, windows, discs | 0.5–20 mm | ±0.05 mm | Optics, inspection |
| Alumina ceramic | Substrates, wear plates | 0.25–10 mm | ±0.02 mm | Insulation, wear parts |
Need a specification we have not listed?
Send the drawing, the material and the inspection criteria; where a tolerance is beyond the line, we say so before you order.